absolute maximum ratings parameter units i d @ v gs = -10v, t c = 25c continuous drain current -34 i d @ v gs = -10v, t c = 100c continuous drain current -21 i dm pulsed drain current ? -136 p d @ t c = 25c max. power dissipation 125 w linear derating factor 1.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 520 mj i ar avalanche current ? -21 a e ar repetitive avalanche energy ? 12.5 mj dv/dt p eak diode recovery dv/dt ? 3.4 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in./1.6mm from case for 10s) weight 9.3 (typical) g o c a 06/13/01 www.irf.com 1 product summary part number bv dss r ds(on) i d irf5m5210 -100v 0.07 -34a for footnotes refer to the last page hexfet ? power mosfet irf5m5210 thru-hole (to-254aa) 100v, p-channel fifth generation hexfet ? power mosfets from international rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistance per silicon unit area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. these devices are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits. to-254aa features: low r ds(on) avalanche energy ratings dynamic dv/dt rating simple drive requirements ease of paralleling hermetically sealed light weight pd - 94247 downloaded from: http:///
irf5m5210 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage -100 v v gs = 0v, i d = -250 a ? bv dss / ? t j temperature coefficient of breakdown -0.12 v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state 0.07 v gs = -10v, i d = -21a resistance v gs(th) gate threshold voltage -2.0 -4.0 v v ds = v gs , i d = -250 a g fs forward transconductance 10 s ( )v ds = -15v, i ds = -21a ? i dss zero gate voltage drain current -25 v ds = -100v ,v gs =0v -250 v ds = -80v, v gs = 0v, t j =125c i gss gate-to-source leakage forward -100 v gs = -20v i gss gate-to-source leakage reverse 100 v gs = 20v q g total gate charge 180 v gs =-10v, i d = -21a q gs gate-to-source charge 25 nc v ds = -80v q gd gate-to-drain (miller) charge 100 t d (on) turn-on delay time 28 v dd = -50v, i d = -21a, t r rise time 150 v gs =-10v, r g = 2.5 t d (off) turn-off delay time 100 t f fall time 120 l s + l d total inductance 6.8 measured from drain lead (6mm / 0.25in. from package ) to source lead (6mm/0.25in. from pacakge c iss input capacitance 2730 v gs = 0v, v ds = -25v c oss output capacitance 824 pf f = 1.0mhz c rss reverse transfer capacitance 465 na ? nh ns a thermal resistance parameter min typ max units test conditions r thjc junction-to-case 1.0 c/w note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) -34 i sm pulse source current (body diode) ? -136 v sd diode forward voltage -1.6 v t j = 25c, i s = -21a, v gs = 0v ? t rr reverse recovery time 260 ns t j = 25c, i f = -21a, di/dt 100a/ s q rr reverse recovery charge 1.8 cv dd -30v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a downloaded from: http:///
www.irf.com 3 irf5m5210 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v -4.5v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -4.5v 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v -4.5v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -4.5v 1 10 100 1000 4 6 8 10 12 v = -50v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -34a downloaded from: http:///
irf5m5210 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 1000 -v ds , drain-tosource voltage (v) 1 10 100 1000 -i d , drain-to-source current (a) tc = 25 c tj = 150 c single pulse 1 ms 1 0ms operation in this area limited by r ds (on) 1 10 100 0 1000 2000 3000 4000 5000 6000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 200 240 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -21a v = -20v ds v = -50v ds v = -80v ds 0.1 1 10 100 1000 0.2 0.8 1.4 2.0 2.6 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j downloaded from: http:///
www.irf.com 5 irf5m5210 fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f v gs 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 5 10 15 20 25 30 35 t , case temperature ( c) -i , drain current (a) c d downloaded from: http:///
irf5m5210 6 www.irf.com fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit r g i as 0.01 t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge -10v d.u.t. v ds i d i g -3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - -12v v gs 25 50 75 100 125 150 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -9.4a -13.3a -21a downloaded from: http:///
www.irf.com 7 irf5m5210 repetitive rating; pulse width limited bymaximum junction temperature. i sd - 21a, di/dt - 400 a/ s, v dd -100v, t j 150 c pulse width 300 s; duty cycle 2% v dd = -25 v, starting t j = 25 c, l= 2.4mh peak i as = -21a, v gs = -10v, r g = 25 footnotes: case outline and dimensions to-254aa ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 06/01 caution not e s : 1. dimens ioning & t olerancing pe r as me y14.5m-1994. 2. all dimens ions are s hown in millimet ers [inches ]. 1 = drain 2 = s ource 3 = gat e pin ass ignments 3. cont rolling dimens ion: inch. 4. conf orms t o jede c out line t o-254aa. 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 0.12 [.005] 13.84 [.545] 13.59 [.535] 13.84 [.545] 13.59 [.535] 3.81 [.150] 2x 31.40 [1.235] 30.35 [1.195] 17.40 [.685] 16.89 [.665] a 1.14 [.045] 0.89 [.035] 0.36 [.014] ba 3x b 20.32 [.800] 20.07 [.790] 3.78 [.149] 3.53 [.139] 123 17.40 [.685] 16.89 [.665] 3.81 [.150] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 0.12 [.005] 13.84 [.545] 13.59 [.535] 13.84 [.545] 13.59 [.535] 3.81 [.150] 2x 22.73 [.895] 21.21 [.835] 17.40 [.685] 16.89 [.665] a 1.14 [.045] 0.89 [.035] 0.36 [.014] ba 3x 4.06 [.160] 3.56 [.140] b r 1.52 [.060] 123 4.82 [.190] 3.81 [.150] 20.32 [.800] 20.07 [.790] 3.78 [.149] 3.53 [.139] beryllia warning per mil-prf-19500 packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on themwhich will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. downloaded from: http:///
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